Is there any one experienced the same case with me?
I have a close loop bias transistor which source and body is connected to same power (pls see the attachment). When I extract R of this connection, we found that the resistance is much smaller than by hand calculation (such as extraction result is 29ohms while hand calculation is 59ohm; please note that I haven’t calculate the bias contact). We guess that the small resistance is caused by the diffusion contact which reduces the resistance a lot.
I tried to prove my guessing by setting the sheet resistance of PSD / NSD to 0 ohm/sq. However the results showed no difference. Could anyone give comment on it? Below is my modification in the tech file. Is there any problem in the modification? Do I miss something?
// === Resistance Sheet [Prop_Cnst, Max_Dist] ===
RESISTANCE SHEET NSD [0 0 2.905E-3 -3.686E-7] MASK
RESISTANCE SHEET PSD [0 0 2.949E-3 -4.049E-7] MASK
// === Resistance Connections [Area, Edge] ===
RESISTANCE CONNECTION METAL1 NSD [0 0] MASK // Contact
RESISTANCE CONNECTION METAL1 PSD [0 0] MASK // Contact